unisonic technologies co., ltd 70n06 power mosfet www.unisonic.com.tw 1 of 9 copyright ? 2014 unisonic technologies co., ltd qw-r502-089.d 70 amps, 60 volts n-channel power mosfet ? description the utc 70n06 is n-channel enhancement mode power field effect transistors with stable off-st ate characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. ? features * r ds(on) < 15m ? @ v gs = 10 v * fast switching capability * avalanche energy specified * improved dv/dt capability ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 70n06l-ta3-t 70n06g-ta3-t to-220 g d s tube 70n06l-tf3-t 70n06g-tf3-t to-220f g d s tube 70N06L-TF2-T 70n06g-tf2-t to-220f2 g d s tube 70n06l-t2q-t 70n06g-t2q-t to-262 g d s tube 70n06l-tq2-t 70n06g-tq2-t to-263 g d s tube 70n06l-tq2-r 70n06g-tq2-r to-263 g d s tape reel note: pin assignment: g: gate d: drain s: source
70n06 power mosfet unisonic technologies co., ltd 2 of 9 www.unisonic.com.tw qw-r502-089.d ? marking
70n06 power mosfet unisonic technologies co., ltd 3 of 9 www.unisonic.com.tw qw-r502-089.d ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current t c = 25c i d 70 a t c = 100c 56 a drain current pulsed (note 2) i dm 280 a avalanche energy single pulsed (note 3) e as 600 mj repetitive (note 2) e ar 20 mj peak diode recovery dv/dt (note 4) dv/dt 10 v/ns power dissipation to-220/to-262/to-263 p d 104 w to-220f 36 w to-220f2 38 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repeativity rating: pulse width limited by junction temperature 3. l=0.24mh, i as =70a, v dd =25v, r g =20 ? , starting t j =25c 4. i sd 48a, di/dt 300a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient ja 62 c/w junction to case to-220/to-262 to-263 jc 1.2 c/w to-220f 3.47 c/w to-220f2 3.28 c/w
70n06 power mosfet unisonic technologies co., ltd 4 of 9 www.unisonic.com.tw qw-r502-089.d ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 60 v drain-source leakage current i dss v ds = 60 v, v gs = 0 v 1 a gate-source leakage current forward i gss v gs = 20v, v ds = 0 v 100 na reverse v gs = -20v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d = 1ma, referenced to 25c 0.08 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10 v, i d = 35 a 15 m ? dynamic characteristics input capacitance c iss v gs = 0 v, v ds = 25 v f = 1mhz 1800 2000 pf output capacitance c oss 800 900 pf reverse transfer capacitance c rss 130 150 pf switching characteristics turn-on delay time t d ( on ) v dd = 30v, v gs =10v,i d =1 a (note 1, 2) 90 120 ns turn-on rise time t r 350 400 ns turn-off delay time t d ( off ) 260 300 ns turn-off fall time t f 260 300 ns total gate charge q g v ds = 60v, v gs = 10 v, i d = 48a (note 1, 2) 210 250 nc gate-source charge q gs 50 nc gate-drain charge (miller charge) q gd 120 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s = 70a 1.4 v maximum continuous drain-source diode forward current i s 70 a maximum pulsed drain-source diode forward current i sm 280 reverse recovery time t rr v gs = 0 v, i s = 70a di f / dt = 100 a/ s 90 ns reverse recovery charge q rr 300 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
70n06 power mosfet unisonic technologies co., ltd 5 of 9 www.unisonic.com.tw qw-r502-089.d ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + 1a peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period 1b peak diode recovery dv/dt waveforms
70n06 power mosfet unisonic technologies co., ltd 6 of 9 www.unisonic.com.tw qw-r502-089.d ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% v ds 90% 10% v gs t d(on) t r t d(off) t f fig. 2a switching test circuit fig. 2b switching waveforms 50k ? 0.3 f dut v ds same type as d.u.t. 0.2 f 12v v gs 1ma 10v charge q gs q gd q g v gs fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r g 10v v ds l v dd t p fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
70n06 power mosfet unisonic technologies co., ltd 7 of 9 www.unisonic.com.tw qw-r502-089.d ? typical characteristics drain current, i d (a) drain current, i d (a) 1 5 0 2 5 drain-source on-resistance, r ds(on) (m ) reverse drain current, i sd (a) capacitance (pf) gate-to-source voltage, v gs (v)
70n06 power mosfet unisonic technologies co., ltd 8 of 9 www.unisonic.com.tw qw-r502-089.d ? typical characteristics drain-source breakdown voltage, bv dss (normalized) (v) drain-source on-resistance, r ds(on) , (normalized) ( ? ) drain current , i d, (a) drain current, i d (a) thermal response, z jc (t)
70n06 power mosfet unisonic technologies co., ltd 9 of 9 www.unisonic.com.tw qw-r502-089.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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